Development and characterization of a DMAPS chip in TowerJazz 180 nm technology for high radiation environments

The increasing availability of commercial CMOS processes with high-resistivity wafers has fueled the R&D
of depleted monolithic active pixel sensors (DMAPS) for use in high energy physics experiments. One of
these developments is a series of monolithic pixel detectors with column-drain readout architecture and small
collection electrode allowing for low-power designs (TJ-Monopix). It is designed in a 180 nm TowerJazz CMOS
process and features a pixel size of 33 μm × 33 μm. The efforts and improvements on the front-end electronics
and sensor design of the current iteration TJ-Monopix2 increase the radiation hardness and efficiency while
lowering the threshold and noise.