Published December 15, 2011
| Version v2
Presentation
Open
BSIM6: Symmetric Bulk MOSFET Model
Creators
- Yogesh S. Chauhan1
- Muhammed Karim (Rumi)1
- Sriram V.1
- Sourabh Khandelwal1
- Ali Niknejad1
- Chenming Hu1
- Weimin Wu2
- Krishnanshu Dandu2
- Keith Green2
- Geoffrey Coram3
- Sergey Cherepko3
- Jing Wang4
- Saurabh Sirohi4
- Josef Watts4
- Maria-Anna Chalkiadaki5
- Anurag Mangla5
- Antonios Bazigos5
- Francois Krummenacher5
- Wladek Grabinski5
- Christian Enz5
- 1. UCB
- 2. TI
- 3. Analog
- 4. IBM
- 5. EPFL
Description
BSIM6: Charge based MOSFET model
- BSIM6 is the next BSIM Bulk MOSFET model
- Charge based core derived from Poisson's solution
- Physical effects (SCE, CLM etc.) taken from BSIM4
- Parameter names matched to BSIM4 parameters
- Gummel Symmetry (symmetric @ VDS=0)
Files
Chauhan_11_BSIM6_NanoTeraEPFL.pdf
Files
(4.1 MB)
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