Published February 2, 2020
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CZTS solar cells and the possibility of increasing Voc using evaporated Al2O3 at the CZTS/CdS interface
Creators
- 1. Research Center of Semiconductor Devices, Meritorious University Autonomous of Puebla, Mexico
- 2. IREC: Institut de Recerca en Energia de Catalunya
- 3. Electronics Faculty. Meritorious University Autonomous of Puebla, Mexico
Description
This work has been published in Solar Energy 198 (2020) 696–703 (DOI: 10.1016/j.solener.2020.02.009). In this work, we report the effect of an ultra-thin Al2O3 layer (down to 3 nm) as interface passivation strategy for the improvement of the performance of Cu2ZnSnS4/CdS based solar cells. After an initial optimization, the Al2O3 deposited by thermal evaporation is proved to improve the properties of the p-n junction. The fabricated devices showed an increment in Voc depending on the composition of the absorber, and an improvement in fill factor (FF) apparently related to the insulation of possible shunt-paths. Also, the impact on other optoelectronic parameters is discussed.
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