Published January 25, 2021
| Version v1
Dataset
Open
Pushing the Study of Point Defects in Thin Film Ferrites to Low Temperatures Using In Situ Ellipsometry
Authors/Creators
- 1. Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, Sant Adrià del Besòs, Barcelona, 08930 Spain
- 2. Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, Sant Adrià del Besòs, Barcelona, 08930 Spain; Centre for Cooperative Research on Alternative Energies (CIC energiGUNE), Basque Research and Technology Alliance (BRTA), Alava Technology Park, Albert Einstein 48, Vitoria-Gasteiz, 01510 Spain
- 3. Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, Sant Adrià del Besòs, Barcelona, 08930 Spain; Department of Electrochemical Energy Storage, ICREA, Passeig Lluís Companys 23, Barcelona, 08010 Spain
Description
Dataset for article "Pushing the Study of Point Defects in Thin Film Ferrites to Low Temperatures Using In Situ Ellipsometry" published in Adv. Mater. Interfaces 2021, 8, 2001881.
The data includes:
- XRD data of La1-xSrxFeO3 thin films
- Optical conductivity of LSF films as a function of oxygen partial pressure and Sr content
- Concentration of electronic holes in LSF thin films as a function of oxygen partial pressure and temperature
- Defect chemistry models employed for describing the concentration of point defects in LSF thin films.
- Equilibrium constants for oxygen incorporation reactions in LSF thin films at different temperatures
- Ellipsometry raw data of LSF50 thin film as a function of equivalent oxygen pressure
- Electrochemical impedance spectra of the LSF50 thin film at 400 ºC
Files
LSF20 XRD.csv
Files
(1.4 MB)
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