Conference paper Open Access

COMSOL Model of a Three-Gate Junctionless Transistor

Rusev, Rostislav; Angelov, George; Ruskova, Ivelina; Gieva, Elitsa; Nikolov, Dimitar; Spasova, Mariya; Hristov, Marin; Radonov, Rosen

A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I-V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11%. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied.

DOI: 10.1109/MIEL52794.2021.9569053
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