Conference paper Open Access

COMSOL Model of a Three-Gate Junctionless Transistor

Rusev, Rostislav; Angelov, George; Ruskova, Ivelina; Gieva, Elitsa; Nikolov, Dimitar; Spasova, Mariya; Hristov, Marin; Radonov, Rosen

A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I-V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11%. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied.

DOI: 10.1109/MIEL52794.2021.9569053
Files (38.2 MB)
Name Size
Figures-MIEL.zip
md5:0fe6fff89f3fcf6159dad9149dd17425
1.2 MB Download
MIEL2021_Rusev, Angelov_JLT - final.doc
md5:02da4d33ce6b8ae7822c0b357db9ad75
306.2 kB Download
MIEL2021REG045.pptx
md5:1b5833b77391158acbaf42858083a02d
953.9 kB Download
MIEL2021REG045_1.mp4
md5:86aba3fbc79551a680339c167094087e
35.7 MB Download
README_Dataset_MIEL.txt
md5:65f5dd125c5a60d20494612620d4c9a1
3.6 kB Download
118
36
views
downloads
All versions This version
Views 11893
Downloads 3629
Data volume 122.8 MB119.9 MB
Unique views 10485
Unique downloads 2622

Share

Cite as