Published February 29, 2020
| Version v1
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Impact of Threshold Voltage roll off in Ultra Thin Fully Depleted Silicon on Insulator MOSFET
- 1. Department of Electronics and Communication Engineering, Noida International University, Noida, U.P. INDIA
- 2. SRM Institute of Science and Technology, U.P. INDIA
Contributors
- 1. Publisher
Description
This article is discussing about threshold voltage roll off effect in Ultra Thin Fully Depleted Silicon on Insulator MOSFET. The device performance is improved due to the reduction in threshold voltage roll off. The thickness of oxide layer is optimized to 2nm which also have a vital role in improvement of device’s throughput. The effect of oxide thickness on parasitic parameter also discussed. Device conductance and transconductance also take in account on simulating the ultra thin fully depleted SOIMOSFET.
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- Is cited by
- Journal article: 2249-8958 (ISSN)
Subjects
- ISSN
- 2249-8958
- Retrieval Number
- C5475029320 /2020©BEIESP