Dataset for GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

Dataset for GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell to be published (link pending).

All measurements, unless stated otherwise, were taken at Instituto de energía solar, Universidad Politécnica de Madrid (IES-UPM). Detailed description of the data can be found in the headers of individual files.

Fig2a_illuminated_IV.xlsx: Current-voltage characteristics of the prototype when illuminated with simulated AM1.5G.

Fig2d_e_S4_S5_EQE.xlsx: External quantum efficiencies of prototype and test device, measured before and after deposition of anti-reflection coating.

Fig3_IIVV.txt: Current-voltage characteristic of prototype when both junctions are measured simultaneously (AM1.5G).

Fig4e_IV.xlsx: Current-Voltage characteristics of devices with or without compensated base contact under illumination, measured in a probe station and after wirebonding.

Fig5a_illuminated_IV.xlsx: Current-voltage characteristics of the test device when illuminated at AM1.5G.

FigS1b_SIMS.xlsx: Doping profiles measured with secondary ion mass spectroscopy by Loughborough Surface Analysis Limited (LSA Ltd).

FigS6_EQE_using_solar_simulator_LEDs.xlsx: External quantum efficiencies of the prototype, measured using single channels of the LED- solar simulator. Both junctions of the prototype were measured with the other junction in open and short circuit.

FigS7_dark_IV.xlsx: Current-voltage characteristics of the prototype in the dark.

FigS8_SIMS.xlsx: Doping profiles of a sample containing the compensated contact measured with secondary ion mass spectroscopy by Loughborough Surface Analysis Limited (LSA Ltd).

FigS9_IIVV.txt: Current-voltage characteristic of the test device when both junctions are measured simultaneously (AM1.5G).

Junction areas of prototype [mm²]:

• Illuminated:
  • Top junction: 1.02 \(\pm\)0.06
  • Bottom junction: 1.57 \(\pm\)0.11
• Dark:
  • Top junction: 1.16 \(\pm\)0.05
  • Bottom junction: 1.93 \(\pm\)0.10

Junction areas of test device [mm²]:

• Illuminated:
  • Top junction: 2.84 \(\pm\)0.12
  • Bottom junction: 3.32 \(\pm\)0.12
• Dark:
  • Top junction: 3.28 \(\pm\)0.10
  • Bottom junction: 4.01 \(\pm\)0.09