Work Function Estimation of Bismuth Doped ZNO Thin Film

In this paper we report bismuth (Bi) doped ZnO based heterojunction devices. The p-type Bi doped ZnO thin films have been deposited on n and p type silicon substrate using sol-gel spin coating method. The ptype nature of the deposited Bi doped ZnO thin films have been analyzed by hot point probe method. The electrical properties of the fabricated devices have been obtained from I-V characteristic measured using semiconductor parameter analyzer. Finally, the work function of Bi doped ZnO has been estimated from the electrical parameter obtained from I-V calculations.