Fabrication of Cu4SnS4 Thin Films: Α Review

Ternary compounds such as Cu₄SnS₄ thin films can be deposited onto glass substrates by various deposition methods: electrodeposition, chemical bath deposition, successive ionic layer adsorption and reaction, and evaporation techniques. Cu₄SnS₄ films could be used in solar cell applications because of their suitable band gap and large absorption coefficient. This paper reviews previous researches on Cu₄SnS₄ thin films. X-ray diffraction showed that the obtained films are orthorhombic in structure and polycrystalline in nature. Cu₄SnS₄ films exhibited p-type electrical conductivity and indicated band gap values in the range of 0.93 to 1.84eV.