Wet Etching on GaAs Wafer using low cost UV system
- 1. Institute of Electronics, Atomic Energy Research Establishment, Savar, Dhaka, Bangladesh.
- 2. Department of Physics, Bangabandhu Sheikh Mujibur Rahman Maritime University, Dhaka 1216, Bangladesh
Description
The study involves the cleaning, wet etching and characterization of GaAs wafer in the first semiconductor device fabrication Laboratory at the Institute of Electronics, Atomic Energy Research Establishment, Savar, Dhaka, Bangladesh during the year 2011. The primary step is to develop necessary photolithography skill in 100 class clean room with Cole-Parmer 365nmUV illumination and thoroughly characterize equipment needed to perform photolithography including Hot plate, Spinner. Here, the studies are extended to photo resist thickness measurements using surface profiler and SEM to view etched surface quality. The experiences and the results of this study will benefit the students who are interested in the semiconductor fabrication field in Bangladesh.
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Wet etching of GaAs wafer using low cost UV system.pdf
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Additional details
References
- Meyyappan, M., G. F. Mclane, H. S. Lee, D. Eckart, M. Namaroff, J. Sasserath. 1992. Magnetron reactive Ion Etching of GaAs in SiCl4, Journal of Vacuum Science and Technology, B, 10 (3), 1215, 1992
- Mahmood, Z. H., S. M. Ullah and J. Rahman. 2000. Etching of n-type GaAs for fabrication of semiconductor laser, Proceedings of International Conference on Transparent Optical Networks: ICTON 2000, Poland, pp. 241 -247.
- Tsung-Ta Ho and Michael R. Shealy, 2003. Semiconductor device fabrication study, Proceeding of the national conference on undergraduate research, 2003, University of Utah.