The structural, electrical and optical properties of spark plasma sintered BaSn1-xSbxO3 ceramics
Authors/Creators
- 1. Institute for Multidisciplinary Research University of Belgrade
- 2. BioSense Institute University of Novi Sad
- 3. Faculty of Technology and Metallurgy University of Belgrade
- 4. Jožef Stefan Institute, Department for Nanostructured Materials
- 5. Institute of Physics, Zagreb, Croatia
- 6. Institute of Physics, University of Belgrade
- 7. Institute of Chemistry, Technology and Metallurgy, University of Belgrade
Description
Antimony doped barium-stannate dense ceramic materials were synthesized using spark plasma sintering
technique out of mechanically activated precursor powders. The influence of various Sb concentrations (x =
0.00 – 0.10) on properties of BaSn1-xSbxO3 ceramics was investigated. Relative densities of prepared samples
were in the range of (79–96) %. TEM analysis revealed the presence of many dislocations in undoped BaSnO3,
and their significant reduction upon doping with Sb. All samples except BaSn0.92Sb0.08O3 exhibit non-linear I-U
characteristic, typical for semiconductors with potential barrier at grain boundaries. Low angle grain boundaries
found only in BaSn0.92Sb0.08O3 caused the loss of potential barrier at grain boundaries which was confirmed by
AC impedance spectroscopy measurements. Consequently, BaSn0.92Sb0.08O3 showed the lowest electrical resistivity
and linear I-U characteristic. UV–vis analysis confirmed the increasing of band gap (Burstein–Moss shift)
values in all doped samples.
Notes
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