Single Ion Implantation of Bismuth

The data contained in this repository has been used to produce the 'Single Ion Implantation of Bismuth' paper DOI: 10.1002/pssa.202000237. 

We present the results from a focused ion beam instrument designed to implant single ions with a view to the fabrication of qubits for quantum technologies. The difficulty of single ion implantation is accurately counting the ion impacts. This has been achieved here through the detection of secondary electrons generated upon each ion impact. We report implantation of single bismuth ions with different charge states into Si, Ge, Cu and Au substrates, and we determine the counting detection efficiency for single ion implants and the factors which affect such detection efficiencies. We found that for 50 keV implants of Bi++ ions into silicon we can achieve a 89% detection efficiency, the first quantitative detection efficiency measurement for single ion implants into silicon without implanting through a thick SiO2 film. This level of counting accuracy provides implantation of single impurity ions with a success rate significantly exceeding that achievable by random (Poissonian) implantation.

The reader of the paper should be abe to recreate any calculation and plots found in the paper, using the data contained within this repository.