A simple way to control the filling degree of the SiO2/Si template pores with nickel
Creators
- 1. SSPA "Scientific-Practical Materials Research Centre of NAS of Belarus, 19, P.Brovka Str. 220072, Minsk, Republic of Belarus
- 2. L.N. Gumilyov Eurasian National University, 2, Satpayev Str. 010008, Astana, Kazakhstan & The Institute of Nuclear Physics of Republic of Kazakhstan, 1, Ibragimov St. 050032, Astana, Kazakhstan
- 3. L.N. Gumilyov Eurasian National University, 2, Satpayev Str. 010008, Astana, Kazakhstan & The Institute of Nuclear Physics of Republic of Kazakhstan, 1, Ibragimov St. 050032, Astana, Kazakhstan & Ural Federal University named after the First President of Russia B.N. Yeltsin, 19, Mira St. 620002, Yekaterinburg, Russia
- 4. North Ossetian State University, 44-46, Vatutina str. 362000,Vladikavkaz, Russian Federation
- 5. Voronezh State Technical University, 14, Moskovski ave., 394026, Voronezh, Russian Federation & Voronezh State University, 1, University square, 394006, Voronezh, Russian Federation
Description
The paper demonstrates a simple way to control the filling degree of the pores of a silicon oxide template on silicon substrate with nickel. SiO2/Si template was formed using the swift heavy ion tracks technology, which includes irradiation with high energy ions and chemical transformation of the obtained latent tracks into the pores. The preparation of SiO2(Ni)/Si nanostructures with different filling degree of pores in SiO2 with nickel was performed using the electrodeposition method by changing the duration of the process. A study and analysis of the morphology of SiO2(Ni)/Si nanostructures using scanning electron and atomic force microscopy was carried out to determine the nature of pore filling by metal.
Files
Yakimchuk et al (AAM) - Materials Today Proceedings 7 (2019) 860–865.pdf
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Related works
- Is previous version of
- Journal article: 10.1016/j.matpr.2018.12.085 (DOI)