Homogeneity of Nb3Sn wires with artificial pinning centres
Creators
- 1. TU Wien
- 2. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- 3. The Ohio State Univ., Columbus, OH (United States)
- 4. Hyper Tech Research Inc., Columbus, OH (United States)
Description
Nb3Sn is experiencing a renaissance thanks to the
high performance required for the Future Circular Collider
(FCC-hh) 16T dipole magnets. One of the most
promising technologies for improving the conductor
performance is the introduction of artificial pinning
centers (APC). Here we present the characterization of
prototype PIT Nb3Sn wires with 4at.%Ta-1at.%Zr and
4at.%Ta-1at.%Hf additions, manufactured by Hyper
Tech Inc.(USA). SQUID magnetometry was used to
assess Jc, benchmarking the high field results obtained
by resistive measurements; local inhomogeneities were
evaluated by means of AC susceptibility (SQUID) and
scanning Hall probe microscopy (SHPM). These results
were then related with the microstructure for investigating
possible relations between radial-Tc distribution
and Sn % content.
Files
EUCAS19_posterOrtino.pdf
Files
(2.3 MB)
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