ElectricRamsey Fringes

The raw data used in the preparation of 'Quantitative analysis of electrically detected Ramsey fringes in Phosphorus doped
Silicon'
P T Greenland, G Matmon, and B J Villis
London Centre for Nanotechnology and Department of Physics and Astronomy,
University College London, London WC1H 0AH, United Kingdom
E T Bowyer, Juerong Li, and B N Murdin
Advanced Technology Institute and SEPNet, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom
A F G van der Meer and B Redlich
Radboud University, Institute for Molecules and Materials,
FELIX Laboratory, Toernooiveld 7c, 6525 ED Nijmegen, The Netherlands
C R Pidgeon
Institute of Photonics and Quantum Science, SUPA,
Heriot-Watt University, Edinburgh EH14 4AS, UK
G Aeppli
Laboratory for Solid State Physics, ETH Zurich, Zurich, CH-8093,
Switzerland, Institut de la Matiere Complexe, EPF Lausanne,br /> Lausanne, CH-1015, Switzerland, and Swiss Light Source,br /> Paul Scherrer Institut, Villigen PSI, CH-5232, Switzerlandbr /> (Dated: 13 July 2015)/p>