Published April 26, 2019
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Aging and gate bias effects on TID sensitivity of wide bandgap power devices
Creators
- 1. IES, Montpellier
- 2. ENSICAEN, Caen
Description
The effect of oxide stress on the total ionizing dose (TID) radiation sensitivity of silicon carbide (SiC) power MOSFETS and TID sensitivity of gallium nitride (GaN) power transistor is reported. Difference in TID response for stressed and unstressed devices was observed.
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Niskanen_radecs18_abstract.pdf
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(178.9 kB)
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