Published December 31, 2015
| Version v1
Journal article
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ON APPROACH OF OPTIMIZATION OF FORMATION OF INHOMOGENOUS DISTRIBUTIONS OF DOPANT IN A FIELD-EFFECT HETEROTRANSISTORS
Creators
- 1. Nizhny Novgorod State University,23 Gagarin avenue,Nizhny Novgorod,603950,Russia
- 2. Nizhny Novgorod State University of Architecture and Civil Engineering,65 Il'insky street,Nizhny Novgorod, 603950, Russia
Description
ABSTRACT :
We introduce an approach of manufacturing of a field-effect heterotransistor with inhomogenous doping of channel. The inhomogenous distribution of concentration of dopant gives a possibility to change speed of transport of charge carriers and to decrease length of channel.
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