Journal article Open Access

Optical Lithography Patterning of SiO2 Layers for Interface Passivation of Thin Film Solar Cells

Sourav Bose, José M. V. Cunha, Sunil Suresh, Jessica De Wild, Tomás S. Lopes, João R. S. Barbosa, Ricardo Silva, Jérôme Borme, Paulo A. Fernandes, Bart Vermang , Pedro M. P. Salomé

Ultrathin Cu(In,Ga)Se2 solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. An optical lithography process that can produce sub‐micrometer contacts in a SiO2 passivation layer at the CIGS rear contact is developed in this work. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques.

Files (748.1 kB)
Name Size
Sourav Optical Lithography Paper-2018-10-02.pdf
md5:ee4266659036e3ab3bd13ef56c99d953
748.1 kB Download
94
66
views
downloads
Views 94
Downloads 66
Data volume 49.4 MB
Unique views 88
Unique downloads 64

Share

Cite as