High efficiency Cu(In,Ga)Se2-based solar cells: Processing of novel absorber structures
Description
Our effort towards the attainment of high performance devices has yielded several devices wi{h total-area conversion efficiencies above 16%, the highest measuring 16.8% under standard reporting conditions (ASTM E892-87, Global 1000 W/m2). The first attempts to translate this development to larger areas resulted in an efficiency of 12.5% for a 16.8-cm 2 monolithically interconnected submodule test structure, and 15.3% for a 4.85-cm 2 single cell. Achievement of a 17.2% device efficiency fabricated for operation under concentration (22-sun) is also reported. All high efficiency devices reported here are made from graded bandgap absorbers. Bandgap grading is achieved by compositional GaJ(In+Ga) profiling as a function of depth. The fabrication schemes to achieve the graded absorbers, the window materials and contacting will be described.
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