Published September 1, 2005
| Version v1
Journal article
Open
Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature
Description
The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.
Files
article.pdf
Files
(374.5 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:d36840eb890eb1fc135f2327123038cd
|
374.5 kB | Preview Download |