FORMATION OF MULTICOMPONENT LAYERS IN THE SYSTEM In-Ga-As-P IN LIQUID PHASE EPITAXY

The fabrication of semiconductor quantum electronic devices based on InP/GaInAsP heterostructures requires the growth of defect-free epitaxial layers. The growth of such epitaxial layers requires in-depth study and analysis of technological processes. This work demonstrates the possibility of growing epitaxial layers  with a density of threading dislocations not exceeding  и , from a thin gap in liquid phase epitaxy. Using the example of a heterosystem  Various options for the formation of complex buffer layers necessary for the production of quantum electronics devices have been studied.