X-RAY AND SEM ANALYSIS OF SILICON DIFFUSED WITH ZINC AND SULFUR IMPURITY ATOMS

In this work, Zn and S atoms were dopped into silicon by diffusion method, and the effect of Zn and S atoms on the crystal lattice of silicon was studied. Researches and measurements (XRD-6100 Shimadzu X-ray diffractometer, SEM-EVO MA 10 scanning electron microscope) were carried out on modern devices. Measurements were carried out at room temperature (T=300 °K). The results are the basis for our conclusion that ZnS binary compounds are formed on the surface of the Si sample.