STUDY OF PHONON PROPERTIES OF CUBIC AND WURTZITE PHASE OF InN
Authors/Creators
- 1. Department of Physics, Ramgarhia College, Satnampura, Phagwara, Punjab
Description
Recently many investigations were committed to the study of group-III nitride semiconductors. The group-III nitride semiconductors have many characteristics which are suitable for high-voltage, high temperature, high-reliability and high frequency devices. Group III-Nitrides have attracted a lot of attention recently, since they are promising materials for light emitting optoelectronic devices in the green and blue color spectrum. One reason is related to their extreme properties, such as high ionicity, very short bond lengths, low compressibility, high thermal conductivity and high melting temperature of the nitride subgroup of the III-V compounds is wider band gap. InN can be used for highly efficient solar cells and light emitting diodes (LEDs). In this work we are reporting the results of our theoretical investigation on the phonon properties of InN in cubic phase and wurtzite phase. The phonon properties are found by using lattice dynamical simulation method based on de Launey angular force (DAF) constant model to understand the role of phonon in these systems. The phonon dispersion curve, phonon density of states and variation of specific heat with temperature of InN in cubic phase and wurtzite phase are also drawn.
Files
209.pdf
Additional details
References
- 1. Farahmand M. Monte Carlo Simulation of Electron Transport in the III-Nitride Wurtzite Phase Materials IEEE 48 2001. 2. Tutuncu H M, bagci S., Shrivastva G.P., albudak A.T. and Ugur G, Structural and dynamical properties of zinc-blende GaN, AlN, BN, and their (110) surfaces. Phys. Rev. B. 71 195309, 2005. 3. Tutuncu H. M. and Srivastva G.P. Phonons in zinc-blende and wurtzite phases of GaN, AlN and BN with the adiabatic bond-charge model. Phys. Rev. B 62: 5028-5034, 2000. 4. Tutuncu H. M., Srivastva G. P. and Duman S. Lattice dynamics of the zinc-blende and wurtzite phases of nitrides. Physica B. 316-317: 190-194, 2002. 5. Kuech T. F., Collins R. T., Smith D. L. and Mailhoit C. Field-effect transistor structure based on strain-induced polarization charges J. Appl. Phys. 67: 2650–2652 1990. 6. Leroux M., Gil B., Edgar J. H., Strite S. Akasaki I, Amano H. and Wetzel C. Galium nitride and related semiconductor INSPEC. 1999. 7. Harima H. Properties of GaN and related compounds studied by means of Raman scattering. J. of Phys. Condensed Matter 14: 967-993, 2002. 8. Loong C. K. Phonon Densities of States and Related Thermodynamic Properties of High Temperature Ceramics J Eur. Ceramic Soc. 19: 2241-2247. 1998. 9. Bungaro C., Rapcewicz K. and Bernholo J. Ab initio phonon dispersion of wurtzite AlN, GaN and InN. Phys. Rev. B. 61: 6720-6725, 2000. 10. Pandey B. P. and Kumar V. Lattice dynamical and specific heat of ZB III-N. Int. J. Adv. Tech. & Engg. Research. 2 5, 2012. 11. Pereira and Srivastva G. P. Origin of the hot phonon effect in group-III nitrides. Phys. Rev. B. 77 155205, 2008. 12. Pereira L. S., Santos A. M., Alves J. L. A., Alves H. W. L. and Leite J. R. Dynamical and thermo dynamical properties of III-nitrides. Microelectronic J 34: 655-657, 2003. 13. Nakamura S. III-V nitride-based light- emitting diodes. Diamond and related materials. 5: 496-500, 1996. 14. Huan You W., Hui Xu, Ning Dan Z., Peng Hua Z. The dielectric and dynamical properties of zinc-blende BN, AlN and GaN from first principal calculation. Science of China Series G: Physics, mechanics and Astronomy" 51: 1037-1045, 2008. 15. Marmalyuk R., Kh. Akchurin and Gorbylev V.A. Evaluation of Elastic Constants of AlN, GaN and InN. Inorganic materials 34 7: 691-694, 1998. 16. Shervin M.E. and Drummond T.J. Predicted elastic constants and Critical layer Thicknesses for Cubic phase AlN, GaN and InN on b-SiC. J Appl. Phys. 69 12. 8423-8425, 1991. 17. Alvesa H. W., Alves J.L.A., Scolfaro L.M.R. and Letie J.R. Planner Force constant method for lattice dynamics of cubic InN. Mats. Sci. Engg. B 93: 90-93, 2002. 18. Zhang J J, Zhao G J & Liang X X. First principle studies of phonon III-N compound semiconductors in wurtzite structure. Int. J. of Appl. Phys. & Maths. 3: 227-230, 2013. 19. Dutta M., Alexson D., Bergman L., Nemanich R. J., Dupuis R., Kim K.W., Komirenko S. and Stroscio M. Phonons in III-V nitrides: confined phonons and interface phonons Physica E. 11: 277-280 2001. 20. Mohammad S.N., Salvador A.A., and Morkoc H. Emerging gallium nitride based devices. Proc. IEEE. 83: 1306-1355, 1995.