Growth of antimonide IR detectors in MOCVD technology

Semiconductors from so called 6.1A group GaSb-InAs-AlSb are having unique features such
as high mobility, type 2 bandgap lineup, which makes them attractive materials for high-
end applications in solar cells, thermophotovoltaic cells, IR emitters, IR detectors, TFET
transistors or new types of RAM memory(UltraRAM).
This work share information about growth of GaSb, lattice matched InGaAsSb and
AlGaAsSb on (100) GaSb substrates in Aix-200 horizontal MOCVD reactors:
1) assisted by Reflectance Anisotropy Spectroscopy (RAS) in-situ monitoring.[1], [2].
2) standard Aix-200 RF without in-situ monitoring
The target layer structure to be developed is eSWIR barrier detector structure aimed at
unbiased operation at 300K.