Published March 30, 2023 | Version CC BY-NC-ND 4.0
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Impact of Negative Capacitance Junctionless Nanowire (NCJLNW) MOSFET on Ring Oscillator Design and Analysis

Authors/Creators

  • 1. Department of Electronics & Telecommunication Engineering, G. H. Raisoni College of Engineering & Management, Pune (M.H), India
  • 2. Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj (U.P), India.

Contributors

Contact person:

  • 1. Department of Electronics & Telecommunication Engineering, G. H. Raisoni College of Engineering & Management, Pune (M.H), India.

Description

Abstract: This work presents the analysis of NCJLNW for low power analog/RF applications; this device shows reduced power consumption, reduced SCEs, smaller leakage and higher Ion/Ioff ratio. The results indicate that the proposed device improves the intrinsic gain, cut-off frequency, transconductance and reduces DIBL. The analysis of band-energy, surface-potential and electricfield has also shown promising results. Ring oscillator has been designed using this device; the analysis of the oscillator presents lower voltage of operation resulting into reduced power consumption, and high noise immunity. The frequency of oscillation is found to be higher at 172.1 GHz at a channel length of 20 nm.

Notes

Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP) © Copyright: All rights reserved.

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Journal article: 2278-3075 (ISSN)

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Subjects

ISSN: 2278-3075 (Online)
https://portal.issn.org/resource/ISSN/2278-3075#
Retrieval Number: 100.1/ijitee.D94640312423
https://www.ijitee.org/portfolio-item/D94640312423/
Journal Website: www.ijitee.org
https://www.ijitee.org/
Publisher: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP)
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