Fluctuation electron microscopy data from amorphous Tb-Co and SiNx

These datasets were used for fluctuation electron microscopy (FEM) analysis of amorphous Tb₁₇Co₈₃. The Tb₁₇Co₈₃ is 30 nm thick. The deposited Ta is sandwiched between two layers of amorphous 10 nm-thick SiN_x. Data are also provided for SiN_x deposited on SiN_x. Samples include: (1) Tb₁₇Co₈₃ deposited at 20^oC, (2) Tb₁₇Co₈₃ deposited at 200^oC, (3) Tb₁₇Co₈₃ deposited at 300^oC, (4) Tb₁₇Co₈₃ deposited at 20^oC and annealed at 200^oC, and (5) Tb₁₇Co₈₃ deposited at 20^oC and annealed at 300^oC.

FEM patterns were collected in a FEI TitanX operated at 200 kV with a convergence angle of 0.51 mrad and a camera length of 300 mm. 

Samples (1) Tb₁₇Co₈₃ deposited at 20^oC and (3) Tb₁₇Co₈₃ deposited at 300^oC were tilted between 0^o and 40^o in 5^o increments. The tilted FEM data is also included.

File types

.dm4 (Gatan DigitalMicrograph) files are provided with the raw scanning nanodiffraction data for each sample. Each sample has multiple associated .dm4 files because measurements were repeated for statistical purposes.

Data processing

For the steps involved in FEM data processing, please visit: https://github.com/ScottLabUCB/FEM

File name format

Using "gRTa200_t00_200kV_cl300_ca0p51_exp0p3_spot9_ss5nm_04.dm4" as an example, the naming format is:

"sample descriptor _ tilt angle _ TEM voltage_camera length [mm] _ convergence angle [mrad] _exposure [sec] _spot size _ step size between probe positions [nm]_ data set number.dm4"

Data are from Tb₁₇Co₈₃ capped with SiN_x unless only "SiN" is stated in the descriptor, in which case the data are from SiN_x.

For the tilted data, the naming format is:

"sample descriptor _ tilt angle _ spot size _ exposure [sec]  convergence angle [mrad]_ bin factor _camera length _ TEM voltage _ data set number.dm4"

For all data, the step size is 5 nm, the spot size is 9, the exposure is 0.3 seconds, the convergence angle is 0.51 mrad, the camera length in 300 mm, and the TEM extraction voltage is 200 kV.