Oxides based resistive switching memories

This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile
memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel
user needs such as higher density, low power consumption, high speed and reliable memories are needed by
manufacturers. Two terminal memory cells based on resistive devices as oxides, phase change materials or magnetism
are discussed in terms of power consumption, read/write speeds, scalability and effective cost. The experimental results
are focused on oxide RRAMs with an emphasis on resistive switching of Metal/HfO2/Metal memory stacks and associated
physical and electrical characteristics.