Published July 30, 2021
| Version v1
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Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm (raw data from journal article)
Authors/Creators
- 1. Faculty of Electronic Engineering, Nis, Serbia
- 2. IHP, Germany
- 3. Tyndall National Institute, Ireland
- 4. University of Granada, Spain
- 5. Sievert Consultancy, Ireland
Description
This upload contains raw data from the manuscript "Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm". The manuscript was published in Sensors and Materials, Vol. 33, No. 6 (2021) 2109–2116; DOI: https://doi.org/10.18494/SAM.2021.3425
The upload consists of .pdf file of the manuscript and .opj files with raw data related to the figures in the manuscript.
This work was supported in part by the European Union’s Horizon 2020 research and innovation programme (Grant No. 857558) and the Ministry of Education, Science and Technology Development of the Republic of Serbia (Project No. 43011).
Files
SM2597.pdf
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(3.5 MB)
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