Published March 15, 2019 | Version v1
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Electrophysical characteristics of initial and irradiated GаAsP LEDs structures

Authors/Creators

  • 1. Institute for Nuclear Research, National Academy of Sciences of Ukraine
  • 2. State Enterprise "Scientific Research Institute of Microdevices" STC "Institute of Single Crystals", National Academy of Sciences of Ukraine
  • 3. L. V. Pisarzhevsky Institute of Physical Chemistry, National Academy of Sciences of Ukraine

Description

Light emitting diodes based on gallium arsenide-phosphide solid solutions were studied. Negative differential resistance regions were identified at lower temperatures T ≤ 130 K. Irradiation of diodes by electrons (E = 2 MeV) leads to the increase in the differential resistance, change in the contact potential difference, and a drop in the radiation intensity. These effects are due to the influence of deep radiation defects levels and surface states, activated by high levels of the ionization excitation peculiar to electron irradiation.

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