Insulators for 2D nanoelectronics: the gap to bridge
Authors/Creators
- 1. Institute for Microelectronics (TU Wien)
- 2. Institute of Functional Nano & Soft Materials (FUNSOM)
- 3. The University of Texas at Austin
- 4. Ioffe Physical-Technical Institute
- 5. Institute for Photonics (TU Wien)
- 6. AMO GmbH, Advanced Microelectronic Center Aachen (AMICA),
- 7. Dipartimento di Ingegneria dell'Informazione, Università di Pisa
- 8. Institute for Micro- and Nanoelectronics, Technical University Ilmenau
Description
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.
Files
Insulators for 2D nanoelectronics the gap to bridge_final.pdf
Files
(2.5 MB)
| Name | Size | Download all |
|---|---|---|
|
md5:5a8b26830ca80e94649313ec665cee4f
|
2.5 MB | Preview Download |