Published June 29, 2020
| Version v1
Poster
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Precision beta-spectrum measurement of RaE with semiconductror spectrometers
Description
In this work we present a precision measurement of the beta-spectrum shape for $^{210}$Bi (historically RaE) performed with spectrometers based on semiconductor Si(Li) detectors. The studies were performed with spectrometers in target-detector and 4-$\pi$ geometries. The measured transition form-factor could be approximated as $H(W) = 1 + (-0.449 \pm 0.002) W + (0.0553 \pm 0.0004) W^2 $ and $H(W) = 1 + (-0.441 \pm 0.002) W + (0.0545 \pm 0.0004) W^2 $ for the target-detector and 4-$\pi$ spectrometer respectively that is in good agreement between the two experiments as well as with the previous studies. The form-factor parameter precision has been substantially increased with respect to the previous experimental results.
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IliaDrachnevDrachnev_Neutrino2020_summary_video.mp4
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