Published April 3, 2019 | Version v1

Density of States at the Interface of Organic Permeable-Base Transistors

  • 1. Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Dresden, Germany

Description

Adaption of a method to extract the density of states from temperature dependent transfer curves. It was originally proposed for field-effect transistors and is tested on organic permeable-base transistors. The poster shows the principle of the method and first results with differently prepared transistors.

Notes

Financial support by the Deutsche Forschungsgemeinschaft (DFG) within the FlexART project LE 747/52-1 in the DFG Priority Program SPP 1796 is gratefully acknowledged. Financial support for the conference attendance by the Wilhelm und Else Heraeus-Stiftung is gratefully acknowledged.

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References

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