Published October 16, 2026
| Version v1.1.0
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Provenance records predict which multi-scale conclusions a foundation-potential release can change in SiGeC semiconductors
Authors/Creators
- 1. Materials Science & Engineering, The University of Utah
Description
Code, data and figure scripts for the paper "Provenance records predict which multi-scale conclusions a foundation-potential release can change in SiGeC semiconductors" (Modelling and Simulation in Materials Science and Engineering (IOP)). Taylor D. Sparks acknowledges support from the Army Research Office Materials Design, under Contract No. W911NF-23-1-0333.
Notes
Files
Sparks-Ackolf-HOLAR-Autonomous-Labs/LeadstoSDL_Reach-v1.1.0.zip
Additional details
Related works
- Is supplement to
- Software: https://github.com/Sparks-Ackolf-HOLAR-Autonomous-Labs/LeadstoSDL_Reach/tree/v1.1.0 (URL)