FORMATION OF NANOFILMS BY SOLID PHASE ION PLASMA METHOD

This work presents the principles of formation of chromium silicon thin films by the solid-phase ion-plasma method of a magnetron sputtering device and the results of Raman spectrum analysis. According to the results of the study, it was found that a polycrystalline CrSi2 nanofilm with a thickness of 80 nm was formed at a temperature of 750 K.