Published August 11, 2026
| Version v1
A 165-GHz Center-Frequency SPDT Switch with 60-GHz Bandwidth Using Reverse-Saturated SiGe HBTs
Authors/Creators
Description
This paper presents a 165-GHz single-pole double throw (SPDT) switch with a 60-GHz bandwidth, designed using reverse-saturated SiGe HBTs in a 0.13-um SiGe BiCMOS process. The switch operates in the 140-200 GHz range, achieving an insertion loss of 2.3-2.9 dB and an isolation of 21.7-22.7 dB when RF pads are excluded. When RF pads are included, insertion loss increases to 2.7-3.7 dB while isolation ranges from 18.9-21.5 dB. The input 1dB compression point (IP1dB) is 15.5 dBm in both cases. The proposed switch leverages a quarter-wave single shunt topology to minimize insertion loss while maintaining high isolation, confirming its suitability for 6G applications.
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Additional details
Funding
Dates
- Accepted
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2026-09-17
References
- X. Chen, J. Winkelhake, M.-D. Wei and R. Negra, "230-GHz SPDT Switch with 60-GHz Bandwidth and 20 dB Dynamic Ratio Utilizing Double-Shunt Topology in SiGe BiCMOS," 2024 19th European Micro wave Integrated Circuits Conference (EuMIC), Paris, France, 2024, pp. 46-49.
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- P. W.Cheng et al., "150-GHz SPDT switch with rat-race coupler topology in 0.13-µm SiGe BiCMOS," 2015 Asia-Pacific Microwave Conference (APMC), Nanjing, China, 2015, pp. 1-3.
- F. Thome and O. Ambacher, "Highly Isolating and Broadband Single Pole Double-Throw Switches for Millimeter-Wave Applications Up to 330 GHz," IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 4, pp. 1998-2009, April 2018.
- R. L. Schmid, A. Ç. Ulusoy, P. Song and J. D. Cressler, "A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse Saturated SiGe HBTs," IEEE Microwave and Wireless Components Letters, vol. 24, no. 1, pp. 56-58, Jan. 2014.