Published August 11, 2026 | Version v1

A 165-GHz Center-Frequency SPDT Switch with 60-GHz Bandwidth Using Reverse-Saturated SiGe HBTs

  • 1. ROR icon Yeditepe University
  • 2. Faculty of Engineering and Natural Sciences Department of Electrical and Electronics Engineering Yeditepe University

Description

This paper presents a 165-GHz single-pole double throw (SPDT) switch with a 60-GHz bandwidth, designed using reverse-saturated SiGe HBTs in a 0.13-um SiGe BiCMOS process. The switch operates in the 140-200 GHz range, achieving an insertion loss of 2.3-2.9 dB and an isolation of 21.7-22.7 dB when RF pads are excluded. When RF pads are included, insertion loss increases to 2.7-3.7 dB while isolation ranges from 18.9-21.5 dB. The input 1dB compression point (IP1dB) is 15.5 dBm in both cases. The proposed switch leverages a quarter-wave single shunt topology to minimize insertion loss while maintaining high isolation, confirming its suitability for 6G applications.

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Additional details

Funding

European Commission
FirstTo6G - Fourier-Domain TRx solutions enabling widespread realisation of 6G 101139167

Dates

Accepted
2026-09-17

References

  • X. Chen, J. Winkelhake, M.-D. Wei and R. Negra, "230-GHz SPDT Switch with 60-GHz Bandwidth and 20 dB Dynamic Ratio Utilizing Double-Shunt Topology in SiGe BiCMOS," 2024 19th European Micro wave Integrated Circuits Conference (EuMIC), Paris, France, 2024, pp. 46-49.
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  • P. W.Cheng et al., "150-GHz SPDT switch with rat-race coupler topology in 0.13-µm SiGe BiCMOS," 2015 Asia-Pacific Microwave Conference (APMC), Nanjing, China, 2015, pp. 1-3.
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