Published July 20, 2026 | Version 1

Data and code for: Photo-induced currents and short-term memory for reservoir computing in a ferroelectric semiconductor

  • 1. EDMO icon Norwegian University of Science and Technology
  • 2. ROR icon University of Duisburg-Essen
  • 3. ROR icon University of Augsburg
  • 4. Research Alliance Ruhr

Description

Data, derived results, and reservoir training code underlying the article
"Photo-induced currents and short-term memory for reservoir computing in a
ferroelectric semiconductor".

The record is organised by figure. It contains: current-voltage characteristics,
photocurrent relaxation traces for Ohmic and Schottky contacts, paired-pulse
facilitation measurements, the full measured photocurrent response to a 400-pulse light
sequence, the light-pulse input sequence, averaged pulse responses grouped by "past"
pulse level, recognition accuracy as a function of training-set size for the reservoir /
no-reservoir / simulated configurations, a baseline-drift correction, an accuracy-versus-
node-count scan, and a double-exponential fit to the photocurrent decay. Both the
as-measured data (in physical units) and the plotted/normalized traces are provided,
together with the recipes needed to go from one to the other.

The reservoir training code (fig3/reservoir_readout.py) is standalone and reproduces the
published recognition accuracies from the data in this record.

See README.md for the full figure-to-file map, data dictionary, and processing recipes.

Files

fig1.zip

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