Published January 17, 2024 | Version v1
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Dataset for publication: Investigation of the Evolution of Bismuth Layers Deposited on Silicon by MBE

Description

First, a procedure for obtaining the well-defined Si(111)-7×7 surface reconstruction of the silicon substrate was developed. In the next step, a 0.4 nm-thick Bi seed layer was deposited and subsequently annealed to form a compact layer promoting the epitaxial growth of thicker bismuth films. Afterwards, a 30 nm-thick Bi film was deposited and further annealed. The evolution of the bismuth film structure with increasing annealing temperature is documented by the corresponding RHEED patterns.

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Additional details

Related works

Is supplement to
Conference proceeding: 10.1063/5.0188562 (DOI)

Funding

European Union
Operational Programme Johanes Amos Commenius, call Excellent Research, co-funded by European Union, administered by the Ministry of Education, Sports and Youth CZ.02.01.01/00/22_008/0004634