Simulation Data for DM-JL-GAA Silicon Nanowire FET Biosensor (5–20 nm Gate Length Scaling)

FETToy 2.0 simulation output data (transfer characteristics) for a dielectric-modulated junctionless gate-all-around silicon nanowire FET biosensor. Five gate lengths (5, 7, 10, 15, 20 nm), five dielectric conditions (air, protein, DNA, virus, reference), two drain biases (0.05 V and 0.5 V). Data supports the manuscript submitted to IEEE Sensors Journal.