Three-Dimensional Transistor Fabrication: A Comprehensive Study of Physics, Chemistry, and Engineering

This research paper presents a rigorous and comprehensive investigation into the fabrication, physics, and engineering of 
three-dimensional (3D) transistors — the cornerstone architecture underpinning modern sub-10 nm semiconductor technology. From the mathematical derivations governing quantum-mechanical carrier transport to the chemical vapour deposition (CVD) processes that define fin morphology, this study systematically examines every dimension of 3D transistor development. The work spans FinFET structures, gate-all-around (GAA) nanowire and nanosheet devices, vertical transport architectures, and emerging topological configurations, unifying them under a coherent analytical framework grounded in device physics, solid-state chemistry, and precision manufacturing science.