Published March 13, 2026 | Version v1
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SPINTRONICS AS A PARADIGM OF POST-SILICON NANOELECTRONICS: SCIENTIFIC NOVELTY, TOPOLOGICAL APPROACHES AND ULTRAFAST SPIN DYNAMICS

  • 1. Fert A., Grünberg P. Giant Magnetoresistance. Nobel Lecture, 2007. 2.Jungwirth T. et al. Antiferromagnetic spintronics. Nature Physics, 2016.

Description

Spintronics has evolved from a phenomenon-driven research domain into a strategic technological platform for post-silicon nanoelectronics. This paper presents a systematic analysis of the scientific novelty underlying contemporary spintronic research. Particular attention is devoted to antiferromagnetic spintronics, spin–orbit torque memory architectures, magnetic skyrmions, topological quantum materials, and neuromorphic spin devices. It is demonstrated that the modern stage of spintronics is characterized by a transition toward terahertz spin dynamics, topological stabilization of information states, symmetry-engineered control mechanisms, and functional integration with CMOS technology. The study identifies material, dynamical, topological, and architectural dimensions of novelty that collectively redefine the physical principles of information processing.

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References

  • Fert A., Grünberg P. Giant Magnetoresistance. Nobel Lecture, 2007.
  • 2.Jungwirth T. et al. Antiferromagnetic spintronics. Nature Physics, 2016.
  • 3.Manipatruni S. et al. Spin–orbit logic with magnetoelectric nodes. Nature, 2019.
  • 4.Fert A., Reyren N., Cros V. Magnetic skyrmions: advances in physics and potential applications. Nature Reviews Materials, 2017.
  • 5.Kane C. L., Mele E. J. Quantum Spin Hall Effect in Graphene. Physical Review Letters, 2005.