Published March 5, 2026
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PNMS Case Study 7 — Semiconductor Bandgap Structure: Si, Ge, GaAs, GaN, InSb
Description
Comparative analysis of five semiconductor materials (Si, Ge, GaAs, GaN, InSb) using the Property-Neutral Matrixscope projection operator. Three material properties — bandgap energy, electron effective mass, and lattice constant — are projected into Planck-referenced signature space and evaluated using structural distance analysis. The study determines whether material separation is a uniform scale shift or a structural deformation. Results show that semiconductor separation is a multi-axis deformation dominated by electronic properties (bandgap energy and effective mass), while lattice geometry contributes weakly to structural distance.
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Related works
- Is supplement to
- Report: 10.5281/zenodo.18809655 (DOI)
References
- CODATA 2018 Recommended Values of the Fundamental Physical Constants.
- O. Madelung — Semiconductors: Data Handbook, 3rd ed., Springer (2004).
- Ioffe Institute Semiconductor Database — Bandgap energies, effective masses, lattice constants.
- C. Kittel — Introduction to Solid State Physics, 8th ed., Wiley (2005).
- S. M. Sze, K. K. Ng — Physics of Semiconductor Devices, 3rd ed., Wiley (2007).