Simulation based study of Inverted-T FINFETs under Nanoscale Dimension

In this project a novel structure known as “Inverted-T FINFETs” has been studied. High performance characteristics of this structure are observed along with looking at some of the drawbacks arising from the geometrical configuration and causing short channel effects. Simulation has been carried out for various devices with different geometrical parameter (for important feature size) to understand the root cause of the problem. It has been observed that by performing device simulations using Comsol multiphysics, an optimally designed structure can be designed to overcome some of the drawbacks while retaining the benefits of IT FINFETs, specially having a large current in on-condition, which is achieved because IT FINFETs have advantage of both vertical fin and ultra-thin horizontal body as per it’s device structure. A comparison has been with the current technology node of devices such as conventional FINFETs, under same dimensions, IT FINFETs provide larger drain-current. An optimally designed IT FINFETs are showing good prospect for the future, especially for application requiring high on-state current.