NUMERICAL MODELING AND OPTIMIZATION OF PEROVSKITE SOLAR CELLS USING SCAPS-1D

A B S T R A C T

The perovskite solar cells (PSCs) is emerging thin film photovoltaic technology with power conversion efficiency (PCE) of 27% exceeding conventional Si solar cells. Organic-inorganic perovskites are widely used in photovoltaic applications due to their favorable bandgap, optoelectronic properties and easy of fabrication process. Herein we numerically optimize the device parameters such as layers thickness, doping density, series and shunt resistance of PSCs using solar cell simulator capacitance software (SCAPS-1D). The optimized simulated device shows maximum PCE of 27.37%, fill factor (FF) of 83.12%, current density (J_SC) of 26.5 mA/cm^-2 and open circuit voltage (V_OC) of 1.19 V. The optimized values of the device SnO₂ electron transport layer (ETL) thickness, perovskite absorber layer, hole transport layer (HTL), perovskite defect density, doping concentration of absorber layer, series resistance (R_s) and shunt resistance (R_sh) were recorded as 5 nm, 950 nm, 200 nm, 1 × 10¹², 1 × 10¹⁶, 1.4 Ω cm⁻² and 10⁸ Ω cm⁻² respectively. These findings suggest the importance of device parameters and their optimization for practical application in device fabrications of efficient and stable PSCs.