HoLiSTEP-Project
Published June 17, 2025 | Version v1
Poster Open

High throughput i line grayscale exposure for 3D optical components and MEMS applications

Authors/Creators

  • 1. ROR icon Fraunhofer Institute for Electronic Nano Systems
  • 2. Benchmark Technologies
  • 3. Benchmark technologies
  • 4. ROR icon Chemnitz University of Technology
  • 5. ROR icon Micro Resist Technology (Germany)

Description

2.5 D structures can be achieved by using grayscale lithography, which can be done with maskless patterning technologies like electron beam (e beam), or direct laser writing These technologies offer a high resolution, but the downside of this sequential exposure direct writing tools are low writing speeds, which hampers
scalability to high volume. To overcome those limitations and enable higher volume manufacturing, an 5 x i line stepper lithography is used Therefore a stepper reticle
based on mask aligner contrast curve was fabricated.

Files

Poster_EMLC_Schermer_EG.pdf

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Additional details

Funding

European Commission
HOLISTEP - SUB-WAVELENGTH HOLOGRAPHIC LITHOGRAPHY STEPPER FOR INTEGRATED CIRCUIT PRODUCTION 101137624