HoLiSTEP-Project
Published January 1, 2025 | Version v1
Poster Open

i-line grayscale exposure using ma-P 1200G resist series for industry applications

Authors/Creators

  • 1. ROR icon Fraunhofer Institute for Electronic Nano Systems
  • 2. Benchmark Technologies
  • 3. ROR icon Chemnitz University of Technology
  • 4. ROR icon Micro Resist Technology (Germany)

Description

2.5D structures can be achieved by using grayscale lithography, which can be done with maskless patterning technologies like electron beam (e-beam) or direct laser writing1,2. These technologies offer a high design flexibility, but the downside of these sequential exposures / direct writing tools are low writing speeds, which hampers scalability to high volume. To overcome those limitations and enable higher volume manufacturing, i-line wafer stepper with specialized grayscale (Benchmark Technologies) reticles is used within this work.

Files

Poster_MNE24_Schermer_final.pdf

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Additional details

Funding

European Commission
HOLISTEP - SUB-WAVELENGTH HOLOGRAPHIC LITHOGRAPHY STEPPER FOR INTEGRATED CIRCUIT PRODUCTION 101137624