On-wafer microwave metrology for future industrial applications
Published November 19, 2025 | Version v1
Conference paper Open

On-Wafer 16-Term Calibration for Characterization of InP HBTs Featuring Sub-THz fmax

Authors/Creators

  • 1. ROR icon Ferdinand-Braun-Institut
  • 2. ROR icon Technical University of Denmark
  • 3. EDMO icon Brandenburg University of Technology (BTU)

Description

In this paper, InP HBTs featuring maximum oscillation frequencies fmax in the sub-THz range are characterized by conducting on-wafer 16-term calibration. A direct comparison between 8-term calibration and 16-term calibration demonstrates that the 16-term calibration improves the way transistor Mason’s gain is derived. The on-wafer measurements of transistors with emitter widths of 0.5 μm and 0.85 μm yield extracted fmax values of 0.44 THz and 0.33 THz, respectively. The study shows that choosing proper on-wafer calibration techniques is highly important for reliable transistor characterization.

Notes

This work was supported in part by the Deutsche Forschungsgemeinschaft (DFG) under grants FL 1201/1-1 and HE 1676/25-1. Also, parts of the work were performed in the framework of the European Partnership on Metrology (EPM) project under grant 23IND10 OnMicro. The 23IND10 OnMicro project was co-financed by the European Union’s Horizon Europe Research and Innovation Program and by the Participating States. With regard to the InP transistor process, funding by the German BMBF through the Research Fab Germany (FMD) under reference FMD02 is gratefully acknowledged.

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Additional details

Related works

Is source of
Conference paper: 10.23919/EuMC65286.2025.11235132 (DOI)

Funding

European Association of National Metrology Institutes
On-wafer microwave metrology for future industrial applications 23IND10