Data for the Publication "Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas"

This upload contains Mathematica and Python code to help others apply the findings of the manuscript "Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas" (doi: 10.1063/5.0248998). This manuscript reports the observation of a signature of light hole and heavy hole band occupation in the two-dimensional hole gas in GaN/AlN heterostructure by fitting nonlinear magnetotransport measurements at moderate (~10 T) magnetic fields.