瞬态阶跃涡流致热效应:深纳米集成电路动态功耗的电磁本源

本文提出基于麦克斯韦方程组的阶跃涡流理论(SECT),揭示5纳米及以下工艺节点中动态功耗的电磁物理本源。该理论将传统开关电容模型重新解释为准静态极限下的投影,并通过能量守恒反演建模推导出包含互连几何参数的通用功耗表达式。跨架构芯片的定性分析验证了理论的核心项f·L·I²与实测功耗趋势的一致性。\n\nThis preprint proposes the Step Eddy Current Theory (SECT) based on Maxwell's equations, revealing the electromagnetic physical origin of dynamic power consumption in 5nm and beyond technology nodes. The theory reinterprets the traditional switch-capacitor model as a quasi-static projection and derives a universal power expression through energy conservation-based inverse modeling. Cross-architecture qualitative analysis validates the consistency between the core term f·L·I² and measured power trends.