Plasma Behavior of SiC MOSFETs with Engineered Substrates During Reverse Recovery

The plasma density and distribution are crucial factors in optimizing the reverse recovery behavior of power semiconductor devices, particularly under conditions of high temperature and current density. This paper investigates the impact of hydrogen ion implantation during the manufacturing process of SiC engineered substrates on the reverse recovery performance of MOSFETs, comparing them to devices based on monocrystalline substrates. The results indicate a lower reverse recovery charge, faster plasma formation, and a reduced charge carrier lifetime in the engineered substrates. Electro-thermal simulations further support these findings by demonstrating a lower carrier density.