DEPENDENCE OF THE RESIDENCE TIME OF CHARGE CARRIERS ON OXYGEN ATOMS IN SILICON DOPED WITH COPPER AND IRIDIUM.

The dependence of the concentration of copper and Iridium atoms in monocrystalline silicon on the residence time of charge carriers (τ) and the rate of cooling after diffusion has been studied. Compensated p-Si<B,P,Su>, p-Si<B,P,Ir> and P-Si<B,P> samples τ  » 90 s irradiated over time. At the same time, it is observed that the change in the concentration of charge carriers in the irradiated Silicon sample depends on the amount of kilorad, which means that the change in its conductivity in the studied samples is due to micro-nobircinism.